Ohmic contact to semiconductor

摘要

An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.

主权项

1. A patterned structure, comprising:
a plurality of ohmic contacts to a semiconductor layer forming a Bragg reflector, each ohmic contact comprising:
a heterostructure barrier layer located on a first surface of the semiconductor layer, wherein the heterostructure barrier layer forms a two dimensional free carrier gas for the plurality of ohmic contacts at a heterointerface of the heterostructure barrier layer and the semiconductor layer, and wherein the heterostructure barrier layer comprises a graded composition; anda metal layer located adjacent to the heterostructure barrier layer, wherein the metal layer forms a contact with the two dimensional free carrier gas.