High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections

摘要

A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

主权项

1. A field effect transistor comprising:
a source electrode and a drain electrode; a channel extending from the source electrode to the drain electrode, wherein the channel includes a plurality of adjacent sections, the plurality of adjacent sections including:
a first section located adjacent to the source electrode, wherein the first section is a normally-off channel;a second section located between the first section and the drain electrode, wherein the second section is a normally-on channel; anda third section located between the second section and the drain electrode, wherein the third section is a normally-on channel having a different voltage threshold than a voltage threshold of the second section, and wherein an absolute value of the voltage threshold for the third section is greater than an absolute value of the voltage threshold for the second section; a gate to the first section of the channel; a charge-controlling electrode connected to the source electrode and physically isolated from the gate, wherein the charge-controlling electrode extends from the source electrode over the gate and over the second section and at least a portion of the third section; a gap-filling material located vertically between the charge-controlling electrode and the second and third sections of the channel and located laterally only within a region between the gate and the drain electrode such that the gap-filling material does not extend over the gate; and a gate isolation material located between the gate and the channel.