发明名称 |
Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment |
摘要 |
The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided. A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device is configured to include a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode. |
申请公布号 |
US9263488(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201314382091 |
申请日期 |
2013.03.04 |
申请人 |
SONY CORPORATION |
发明人 |
Kataoka Toyotaka |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
Hazuki International, LLC |
代理人 |
Hazuki International, LLC |
主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a wiring layer that is formed on the semiconductor substrate; a drive circuit that is provided in a circuit forming region of the semiconductor substrate; a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer; an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode; and a second semiconductor substrate that is bonded with a side surface on which the wiring layer of the semiconductor substrate is formed, wherein the external connection terminal is continuously formed in a side surface of the semiconductor substrate to a side surface of the second semiconductor substrate. |
地址 |
Tokyo JP |