Array substrate

摘要

The array substrate includes a substrate, a thin film transistor (TFT) and a pixel electrode. The TFT is disposed on the substrate and includes a gate electrode, a gate insulating layer, a patterned semiconductor layer, a patterned etching stop layer, a patterned hard mask layer, a source electrode and a drain electrode. The patterned gate insulating layer is disposed on the gate electrode. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The patterned etching stop layer is disposed on the patterned semiconductor layer. The source and the drain electrodes are disposed on the patterned etching stop layer and the patterned semiconductor layer. The patterned hard mask layer is disposed between the source electrode and the patterned etching stop layer and disposed between the drain electrode and the patterned etching stop layer. The pixel electrode is disposed on the substrate and electrically connected to the TFT.

主权项

1. An array substrate, comprising:
a substrate; a thin film transistor, disposed on the substrate, wherein the thin film transistor comprises:
a gate electrode;a gate insulating layer, disposed on the gate electrode;a patterned semiconductor layer, disposed on the gate insulating layer;a patterned etching stop layer, disposed on the patterned semiconductor layer;a source electrode and a drain electrode, disposed on the patterned etching stop layer and the patterned semiconductor layer; anda patterned hard mask layer, disposed between the source electrode and the patterned etching stop layer and disposed between the drain electrode and the patterned etching stop layer; and a pixel electrode, disposed on the substrate, and the pixel electrode is electrically connected to the thin film transistor.