Methods of forming an array of conductive lines and methods of forming an array of recessed access gate lines

摘要

An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.

主权项

1. A method of forming an array of recessed access gate lines, comprising:
etching isolation trenches into semiconductor material to a first depth to define active area regions; etching the isolation trenches deeper into the semiconductor material to a second depth, the etching to the second depth projecting the isolation trenches longitudinally into opposing longitudinal ends of individual active area regions below the first depth; forming dielectric trench isolation material in the extended isolation trenches including projecting portions thereof to form dielectric projections extending into the opposing longitudinal ends of the individual active area regions under an elevationally outermost surface of the semiconductor material of the active area regions, the semiconductor material being elevationally over the dielectric projections; and forming recessed access gate lines which individually extend transversally across the active area regions and extend between the longitudinal ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material.