Implant for performance enhancement of selected transistors in an integrated circuit

摘要

A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

主权项

1. A semiconductor structure comprising:
a well; and a plurality of transistors formed within the well, wherein:
each transistor of the plurality of transistors is of a same conductivity type, andthe plurality of transistors comprises:
a first subset of transistors, wherein each transistor in the first subset of transistors has a transistor width that does not satisfy a predetermined width constraint; anda second subset of transistors, mutually exclusive with the first subset of transistors, wherein each transistor in the second subset of transistors has a transistor width that satisfies the predetermined width constraint, wherein each transistor in the second subset of transistors has a channel region which includes an additional dopant as compared to the channel regions of the first subset of transistors, and wherein the channel region of each transistor of the plurality of transistors has a dopant of a first conductivity type and the additional dopant in the channel region of each transistor of the second subset of transistors is of a second conductivity type opposite the first conductivity type.