发明名称 Semiconductor device having parallel conductive lines including a cut portion and method of manufacturing the same
摘要 A semiconductor device includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction. The parallel conductive lines includes first and second lines that are adjacent, and a third line that is adjacent to the second line, and the first and third lines each have a cut portion at different points along the second direction.
申请公布号 US9263323(B2) 申请公布日期 2016.02.16
申请号 US201414194433 申请日期 2014.02.28
申请人 Kabushiki Kaisha Toshiba 发明人 Sonoda Masahisa
分类号 H01L23/498;H01L21/768;H01L21/033;H01L21/311;H01L23/528 主分类号 H01L23/498
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A semiconductor device comprising: a wiring pattern that includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction, wherein the parallel conductive lines includes first and second lines that are adjacent, a third line that is adjacent to the second line, the first and third lines each having a cut portion at different points along the second direction, fourth and fifth lines adjacent to the third line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the third line, and sixth and seventh lines adjacent to the first line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the first line.
地址 Tokyo JP