发明名称 |
Semiconductor device having parallel conductive lines including a cut portion and method of manufacturing the same |
摘要 |
A semiconductor device includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction. The parallel conductive lines includes first and second lines that are adjacent, and a third line that is adjacent to the second line, and the first and third lines each have a cut portion at different points along the second direction. |
申请公布号 |
US9263323(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414194433 |
申请日期 |
2014.02.28 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sonoda Masahisa |
分类号 |
H01L23/498;H01L21/768;H01L21/033;H01L21/311;H01L23/528 |
主分类号 |
H01L23/498 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A semiconductor device comprising:
a wiring pattern that includes a plurality of parallel conductive lines that are spaced apart from one another in a first direction and extend in a second direction transverse to the first direction, wherein the parallel conductive lines includes first and second lines that are adjacent, a third line that is adjacent to the second line, the first and third lines each having a cut portion at different points along the second direction, fourth and fifth lines adjacent to the third line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the third line, and sixth and seventh lines adjacent to the first line, each having a cut portion that is substantially aligned in the second direction with the cut portion of the first line. |
地址 |
Tokyo JP |