Plasma processing apparatus and plasma processing method

摘要

A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.

主权项

1. A plasma processing method, comprising:
mounting a sample to be processed on a dielectric film on a sample stage, disposed in a lower part of a processing chamber inside a vacuum container, such that a clearance space is formed between a reverse side of the sample and a surface of the dielectric film, the clearance space being in communication with an interior of the processing chamber; introducing an inert gas into the interior of the processing chamber and the clearance space to increase a pressure in the processing chamber above a plasma processing start pressure; holding the sample on the sample stage until a sample temperature increases to a predetermined temperature that is lower, by a predetermined value, than a plasma processing start temperature or until a predetermined time elapses; evacuating the interior of the processing chamber and the clearance space to reduce the pressure in the processing chamber; chucking the sample onto the sample stage by supplying power to electrodes arranged inside the dielectric film; supplying a heat transfer gas to the clearance space; increasing the sample temperature to within a predetermined allowable temperature range of the plasma processing start temperature; supplying processing gas into the processing chamber; and processing the sample using plasma.