发明名称 |
Group III nitride semiconductor light-emitting device |
摘要 |
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer. |
申请公布号 |
US9263639(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414329809 |
申请日期 |
2014.07.11 |
申请人 |
Toyoda Gosei Co., Ltd. |
发明人 |
Aoki Masato;Saito Yoshiki |
分类号 |
H01L31/06;H01L21/28;H01L33/30;H01L33/02;H01L33/32;H01L33/00 |
主分类号 |
H01L31/06 |
代理机构 |
McGinn IP Law Group, PLLC |
代理人 |
McGinn IP Law Group, PLLC |
主权项 |
1. A Group III nitride semiconductor light-emitting device having a plurality of Group III nitride semiconductor layers on a surface of Group III nitride semiconductor substrate, the light-emitting device comprising:
an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer; wherein the n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer; and the first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer. |
地址 |
Kiyosu-shi, Aichi-ken JP |