Semiconductor device with one-side-contact and method for fabricating the same

摘要

A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.

主权项

1. A semiconductor device, comprising:
a plurality of active regions, each configured to have a first sidewall and a second sidewall, the plurality of the active regions being separated from one another by trenches; a side contact configured to be connected to the first sidewall; a cell junction formed at a portion of each active region on the side of the first sidewall to be connected to the side contact; a diffusion barrier region formed at a portion of each active region on the side of the second sidewall; and metal bit lines, each configured to be connected to the side contact and fill a portion of each trench, wherein the diffusion barrier region is counter-doped with an impurity which is different from an impurity doping the cell junction, wherein the active regions have a stacked structure of a first conductive layer pattern with the cell junction and the diffusion barrier region formed therein and a second conductive layer pattern formed over the first conductive layer pattern.