Capping poly channel pillars in stacked circuits

摘要

A three dimensional or stacked circuit device includes a conductive channel cap on a conductor channel. The channel cap can be created via selective deposition or other process to prevent polishing down the conductive material to isolate the contacts. The conductor channel extends through a deck of multiple tiers of circuit elements that are activated via a gate. The gate is activated by electrical potential in the conductor channel. The conductive cap on the conductor channel can electrically connect the conductor channel to a bitline or other signal line, and/or to another deck of multiple circuit elements.

主权项

1. A circuit device comprising:
a source conductor layer on a semiconductor substrate; a first deck including multiple tiers of circuit elements stacked adjacent each other, each tier including a circuit element to be activated via a gate; at least one first conductor channel extending through the multiple tiers of circuit elements, the first conductor channel to electrically couple the gates of the circuit elements to the source conductor; a first conductive cap on each first conductor channel, the first conductive caps forming an ohmic contact with respective first conductor channels, each first conductive cap formed on each first conductor channel in openings in a separation layer, the first conductive caps not having polishing artifacts: a bitline to ohmically contact the first conductor channel via the first conductive cap; and a second deck, including second multiple tiers of circuit elements, second conductor channels, and second conductive caps; wherein the first conductive cap is a stop layer between the first deck and the second deck, to interconnect the second conductor channel of the second deck to the first conductor channel of the first deck.