UV sensor with nonvolatile memory using oxide semiconductor films

摘要

A ultra-violet sensor has a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor. A memory device has an array of ultra-violet sensors, each sensor having a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor, an array of ultra-violet light sources corresponding to the array of ultra-violet sensors, an array of detectors electrically coupled to the array of ultra-violet sensors, driving circuitry attached to the array of sensors and the ultra-violet light sources to allow addressing of the arrays, and a reset mechanism.

主权项

1. A ultra-violet sensor memory cell, comprising:
a gate on a substrate; a dielectric formed over the gate and the substrate; an oxide semiconductor formed over the dielectric, wherein the oxide semiconductor is comprised of a mixture of component materials, one of the component materials having a ratio of at least three to one to one of the other materials; the oxide semiconductor having a characteristic persistent photoconductivity that stores data; a source electrode and a drain electrode formed at the edges of the oxide semiconductor; and at least one detector electrically coupled to the ultra-violet sensor to read the data stored in the sensory memory cell.