| 发明名称 | Semiconductor device | ||
| 摘要 | A method includes measuring a first pulse width of a resistance variable memory cell coupled between a first terminal and a second terminal, the first pulse width including a period from starting a first data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the first data writing of the resistance variable memory cell, and measuring a second pulse width of the resistance variable memory cell coupled between the first and the second terminal. The method includes setting longer one of the first and second pulse widths in a first storage area as a pulse width to be used in program. | ||
| 申请公布号 | US9263115(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414476433 | 申请日期 | 2014.09.03 |
| 申请人 | Micron Technology, Inc. | 发明人 | Kajigaya Kazuhiko |
| 分类号 | G11C11/16;G11C13/00;G11C27/02 | 主分类号 | G11C11/16 |
| 代理机构 | Dorsey & Whitney LLP | 代理人 | Dorsey & Whitney LLP |
| 主权项 | 1. A method, comprising: measuring a first pulse width of a resistance variable memory cell coupled between a first terminal and a second terminal, the first pulse width including a period from starting a first data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the first data writing of the resistance variable memory cell; measuring a second pulse width of the resistance variable memory cell coupled between the first and the second terminal, the second pulse width including a period from starting a second data writing of the resistance variable memory cell by applying a voltage between the first and second terminals to ending the second data writing of the resistance variable memory cell; and setting longer one of the first and second pulse widths in a first storage area as a pulse width to be used in program. | ||
| 地址 | Boise ID US | ||