MISFET device and method of forming the same

摘要

Embodiments of the present disclosure include a method for forming a semiconductor device, a method for forming a MISFET device, and a MISFET device. An embodiment is a method for forming a semiconductor device, the method including forming a source/drain over a substrate, forming a first etch stop layer on the source/drain, and forming a gate dielectric layer on the first etch stop layer and along the substrate. The method further includes forming a gate electrode on the gate dielectric layer, forming a second etch stop layer on the gate electrode, and removing the gate dielectric layer from over the source/drain.

主权项

1. A method for forming a semiconductor device, the method comprising:
forming a barrier layer over a substrate, forming a source/drain over and in direct contact with the barrier layer; forming a first etch stop layer on the source/drain; forming a gate dielectric layer on the first etch stop layer and along the substrate; forming a gate electrode on the gate dielectric layer; forming a second etch stop layer on the gate electrode; removing the gate dielectric layer from over the source/drain; forming an inter-layer dielectric over the source/drain, the gate electrode, and the substrate; forming a first opening through the inter-layer dielectric and the first etch stop layer to expose a portion the source/drain; forming a second opening through the inter-layer dielectric and the second etch stop layer to expose a portion of the gate electrode; and filling the first and second openings with a conductive material to form a first contact and a second contact, the first contact contacting the first etch stop layer and the source/drain, the second contact contacting the second etch stop layer and the gate electrode.