Resist underlayer film-forming composition containing copolymer resin having heterocyclic ring

摘要

A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1):;
In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.

主权项

1. A resist underlayer film-forming composition comprising:
a polymer comprising a unit structure of Formula (1): wherein in Formula (1),
R1 and R2 each are a substituent of a hydrogen atom on an aromatic ring, and are each independently a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxy group, a C1-10 alkyl group, a C2-10 alkenyl group, a C6-40 aryl group, an organic group comprising an ether bond, an organic group comprising a ketone bond, an organic group comprising an ester bond, or a group in which any of these are combined;R3 is a hydrogen atom, a C1-10 alkyl group, a C2-10 alkenyl group, a C6-40 aryl group, an organic group comprising an ether bond, an organic group comprising a ketone bond, an organic group comprising an ester bond, or a group in which any of these are combined;R4 is a C6-40 aryl group or a heterocyclic group, and the aryl group and the heterocyclic group each are optionally substituted with a halogen group, a nitro group, an amino group, a C1-10 alkyl group, a C1-10 alkoxy group, a C6-40 aryl group, a formyl group, a carboxy group, a carboxylic acid ester group, or a hydroxy group;R5 is a hydrogen atom, a C1-10 alkyl group, a C6-40 aryl group, or a heterocyclic group, and the alkyl group, the aryl group, and the heterocyclic group each are optionally substituted with a halogen group, a nitro group, an amino group, or a hydroxy group, and R4 and R5 optionally form a ring together with a carbon atom bonded to R4 and R5;X is an O atom, a S atom, a CH2 group, a C═O group, a CH═CH group, or a CH2—CH2 group;n1 and n2 each are an integer ranging from 0 to 3; andm1 and m2 each are an integer ranging from 0 to 3, and the polymer is contained in the composition at a proportion of 50 to 100% by mass of a solid content of the composition, the solid content being the content of all components of the resist underlayer film-forming composition excluding a solvent.