Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials

摘要

Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.

主权项

1. A photoluminescence spectroscopy system for identifying and quantifying impurities in one or more semiconductor samples, each comprising a first surface, a substantially orthogonal second surface, and an edge at the intersection of the first and second surfaces adapted to allow collection of photoluminescence emitted therefrom, the photoluminescence spectroscopy system comprising:
a laser system adapted to provide a defocused laser beam capable of causing an illuminated semiconductor to photoluminesce; and a collection lens having a lens focal point at the edge of the one or more semiconductor samples positioned for analysis, the lens adapted to collect emitted photoluminescence from said focal point; wherein the system is configured such that when the one or more semiconductor samples is positioned for analysis, its first surface is oriented to be at an angle of deviation of greater than 0° and less than or equal to 90° with respect to a position parallel to the collection lens; wherein the first surface is adapted to be at least partially illuminated by the defocused laser beam; wherein the defocused laser beam is a defocused collimated laser beam; and wherein the laser system comprises a defocusing system comprising a first lens that collects and focuses a collimated input laser beam to a laser focal point within the defocusing system, and a second lens that collects and magnifies the focused laser beam at the laser focal point to form as an output, the defocused collimated laser beam.