| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element with improved current diffusivity in a p-side nitride semiconductor layer. <P>SOLUTION: A nitride semiconductor element includes a stack of an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate in this order. The nitride semiconductor element has a p-type contact layer and an AlN layer having a different composition from the p-type contact layer in the p-type nitride semiconductor layer, and the p-type contact layer is in contact with the AlN layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
