发明名称 |
Power semiconductor device having reduced gate-collector capacitance |
摘要 |
A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate. |
申请公布号 |
US9263560(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414273341 |
申请日期 |
2014.05.08 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
Park Jae Hoon;Sung Jae Kyu;Song In Hyuk;Oh Ji Yeon;Seo Dong Soo |
分类号 |
H01L29/00;H01L29/739;H01L29/66;H01L29/78;H01L29/74;H01L29/06;H01L29/423 |
主分类号 |
H01L29/00 |
代理机构 |
McDermott Will & Emery LLP |
代理人 |
McDermott Will & Emery LLP |
主权项 |
1. A power semiconductor device, comprising:
a first conductivity type first semiconductor region; a second conductivity type second semiconductor region disposed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region disposed in an upper inner side of the second semiconductor region; a trench gate penetrating through a portion of the first semiconductor region from the third semiconductor region; a first conductivity type fourth semiconductor region disposed below the second semiconductor region while being spaced apart from the trench gate; and a fifth semiconductor region formed in an upper portion of the second semiconductor region and formed to be in contact with the fourth semiconductor region. |
地址 |
Suwon-Si, Gyeonggi-Do KR |