| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device, including: a P-type substrate; an N-type region, contacting with the P-type substrate; a N+-type doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting with the N-type region; and a N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region. | ||
| 申请公布号 | US9263447(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201514680482 | 申请日期 | 2015.04.07 |
| 申请人 | NUVOTON TECHNOLOGY CORPORATION | 发明人 | Chang Chia-Wei;Chen Po-An |
| 分类号 | H01L21/74;H01L27/092;H01L29/78;H01L29/10;H01L29/06;H01L29/08;H01L21/8238;H01L21/761 | 主分类号 | H01L21/74 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A semiconductor device, comprising: a P-type substrate; an N-type region, contacting the P-type substrate; an N+ doped region, disposed in the N-type region; a first P+-type doped region, disposed in the N-type region; a second P+-type doped region, disposed in the N-type region; a P-type buried layer, disposed in the P-type substrate under the N-type region and contacting the N-type region; and an N-type doped region, disposed in the P-type substrate under a contact surface between the P-type buried layer and the N-type region. | ||
| 地址 | Hsinchu Science Park TW | ||