Nanowire MOSFET with support structures for source and drain

摘要

A nanowire field effect transistor (FET) device and method for forming the same is disclosed. The device comprises: a semiconductor substrate; a device layer including a source region and a drain region connected by a suspended nanowire channel; and etch stop layers respectively arranged beneath the source region and the drain region, the etch stop layers forming support structures interposed between the semiconductor substrate and the source and drain regions. The suspended nanowire channel is formed by etching a sacrificial material disposed beneath the suspended nanowire channel and between the etch stop layers. The etching is selective to the sacrificial material to prevent the removal of the etch stop layers beneath the source region and the drain region.

主权项

1. A method for forming a nanowire field effect transistor (FET) device, the method comprising:
forming a device layer including a source region and a drain region being connected by a nanowire channel to be suspended,
the nanowire channel being provided over a sacrificial material; forming first and second etch stop layers respectively beneath the source region and the drain region,
each of the etch stop layers forming a support structure over a semiconductor substrate; and suspending the nanowire channel by
etching the sacrificial material beneath the nanowire channel, the etching being selective to the sacrificial material to substantially prevent the removal of the etch stop layers beneath the source region and the drain region.