Method and apparatus of forming silicon nitride film

摘要

Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.

主权项

1. A method of forming a silicon nitride film on a surface to be processed of a target object, the method comprising:
repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermined number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed, wherein the first predetermined number is equal to or greater than 2, and the second and third predetermined numbers are equal to or greater than 1.