| 摘要 |
A semiconductor-wafer evaluation method includes: before the mirror-polishing step, measuring warp data of displacement of the surface of the semiconductor wafer with a capacitive shape measurement device; setting a prescribed width of an outer circumferential portion of the semiconductor wafer as a sampling range; performing fitting of the warp data within the sampling range with a fitting function in a predetermined fitting range; calculating a difference (Range) between a maximum and a minimum of the warp data after the fitting within the sampling range; and, after the mirror-polishing step, evaluating the nanotopography of the surface of the semiconductor wafer on the basis of the calculated difference (Range). |
