Voltage protection scheme for semiconductor devices

摘要

Various examples are provided for voltage protection of semiconductor devices. In one example, among others, a circuit includes a MOS device, a protective device connected between the MOS device and an output voltage connection, and gate protection circuitry configured to provide a bias voltage to a gate of the protective device. The bias voltage includes a DC bias component and an AC bias component that synchronously varies with a voltage of the output voltage connection. Another example includes a plurality of protective devices connected between the MOS device and the output voltage connection. The gate protection circuitry may be configured to provide a plurality of bias voltages to the plurality of protective devices. In another example, a method includes attenuating an output voltage, combining the attenuated output voltage with a constant offset voltage to generate a gate bias voltage, and providing the gate bias voltage to a protective device.

主权项

1. A circuit, comprising:
a metal oxide semiconductor (MOS) device; a protective device connected between the MOS device and an output voltage connection of the MOS device; and gate protection circuitry configured to provide a bias voltage to a gate of the protective device, the bias voltage comprising a DC bias component and an AC bias component that synchronously varies with a voltage of the output voltage connection, wherein the gate protection circuitry comprises a DC bias circuit comprising a resistor directly connected between a pair of current sources and the DC bias component is based upon a current level of the pair of current sources and a resistance of the resistor.