发明名称 Light emitting device containing iridium complex
摘要 A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.
申请公布号 US9263691(B2) 申请公布日期 2016.02.16
申请号 US201514656151 申请日期 2015.03.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 Yamazaki Hiroko;Tokuda Atsushi;Tsutsui Tetsuo
分类号 H01L51/00;H01L51/50;H01L51/52 主分类号 H01L51/00
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A light-emitting device comprising: an anode; a first layer over the anode, the first layer including a nitrogen-containing compound; a second layer over and in contact with the first layer, the second layer including a first metal complex containing lithium or aluminum, and a second metal complex containing iridium; a third layer over and in contact with the second layer, the third layer including at least one of lithium and fluorine; and a cathode over and in contact with the third layer.
地址 Kanagawa-ken JP