发明名称 Light emitting diode package structure and manufacturing method thereof
摘要 Various examples of a light emitting diode (LED) package structure and a manufacturing method thereof are described. In one aspect, a LED package structure includes a carrier, a LED chip, a first annular barricade, a second annular barricade and a fluorescent encapsulant. The LED chip is electrically connected to the carrier. The first annular barricade and the second annular barricade are disposed around the LED chip, with the second annular barricade disposed between the LED chip and the first annular barricade. The fluorescent encapsulant is disposed on the carrier and at least covers the LED chip and the second annular barricade. The fluorescent encapsulant includes at least a type of phosphor and at least a type of gel with the phosphor distributed over a surface of the LED chip.
申请公布号 US9263647(B2) 申请公布日期 2016.02.16
申请号 US201313913833 申请日期 2013.06.10
申请人 Everlight Electronics Co., Ltd. 发明人 Yeh Robert;Pan Ke-Hao
分类号 H01L33/50 主分类号 H01L33/50
代理机构 Han IP Corporation 代理人 Han IP Corporation
主权项 1. A light emitting diode (LED) package structure, comprising: a carrier that comprises a carrying region and a peripheral region surrounding the carrying region; at least one LED chip disposed on the carrier in the carrying region and electrically coupled to the carrier; a first annular wall disposed on the carrier in the peripheral region and surrounding the at least one LED chip; a second annular wall disposed within the first annular wall and surrounding the at least one LED chip, a height of the second annular wall is lower than a height of the first annular wall, the second annular wall and the first annular wall defining a groove therebetween; and a fluorescent encapsulant disposed on the carrier and covering at least the at least one LED chip and the second annular wall, the fluorescent encapsulant comprising at least a phosphor and a gel with the phosphor distributed over a surface of the at least one LED chip, the phosphor also distributed over or on an upper surface of the second annular wall, wherein at least one of the first annular wall and the second annular wall has characteristics of non-absorption of light and reflectiveness.
地址 TW