| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a channel layer including a sidewall having protrusions and depressions alternating with each other in a direction in which the channel layer extends, a tunnel insulating layer surrounding the channel layer, first charge storage patterns surrounding the tunnel insulating layer formed in the depressions, blocking insulation patterns surrounding the first charge patterns formed in the depressions, wherein the blocking insulating patterns include connecting portions coupled to the tunnel insulating layer, and second charge storage patterns surrounding the tunnel insulating layer formed in the protrusions. | ||
| 申请公布号 | US9263596(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201414495558 | 申请日期 | 2014.09.24 |
| 申请人 | SK Hynix Inc. | 发明人 | Yoo Deung Kak |
| 分类号 | H01L29/792;H01L27/115 | 主分类号 | H01L29/792 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: a channel layer including a sidewall having protrusions and depressions alternating with each other in a direction in which the channel layer extends; a tunnel insulating layer surrounding the channel layer; first charge storage patterns surrounding the tunnel insulating layer formed in the depressions; blocking insulation patterns surrounding the first charge storage patterns formed in the depressions, wherein the blocking insulating patterns include connecting portions coupled to the tunnel insulating layer; and second charge storage patterns surrounding the tunnel insulating layer formed in the protrusions. | ||
| 地址 | Gyeonggi-do KR | ||