Semiconductor device

摘要

A semiconductor device according to an embodiment, includes a first dielectric film arranged above a gate electrode, an oxide semiconductor film arranged above the first dielectric film, a second dielectric film arranged above the oxide semiconductor film, a drain electrode having a drain contact portion that is arranged in the second dielectric film and connects one end side of the oxide semiconductor film to a wire of an upper layer, and a source electrode having a source contact portion that is arranged in the second dielectric film and connects another end side of the oxide semiconductor film to a wire of an upper layer. A wiring portion arranged above the second dielectric film and forming the wire of the upper layer is formed to overhang toward a center direction of the oxide semiconductor film on a source electrode side more than on a drain electrode side.

主权项

1. A semiconductor device comprising:
a gate electrode; a first dielectric film arranged above the gate electrode; an oxide semiconductor film arranged above the first dielectric film; a second dielectric film arranged above the oxide semiconductor film; a drain electrode having a drain contact portion that is arranged in the second dielectric film and that connects one end side of the oxide semiconductor film to a wire of an upper layer; and a source electrode having a source contact portion that is arranged in the second dielectric film and connects another end side of the oxide semiconductor film to a wire of the upper layer, wherein a wiring portion arranged above the second dielectric film and positioned in the upper layer is formed to overhang toward a center direction of the oxide semiconductor film more on a source electrode side than on a drain electrode side, wherein the wiring portion includes a source wiring portion connected to the source contact portion, and a drain wiring portion connected to the drain contact portion, and wherein the source wiring portion is arranged to overhang toward a channel region side of the oxide semiconductor film, wherein an overhang portion of the source wiring portion is arranged so as to face a channel region in the oxide semiconductor film via the second dielectric film.