发明名称 |
Power semiconductor devices, structures, and related methods |
摘要 |
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types. |
申请公布号 |
US9263573(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414523492 |
申请日期 |
2014.10.24 |
申请人 |
MAXPOWER SEMICONDUCTOR INC. |
发明人 |
Darwish Mohamed N.;Zeng Jun;Blanchard Richard A. |
分类号 |
H01L29/78;H01L29/06;H01L29/66;H01L29/739;H01L21/265;H01L29/08;H01L29/10;H01L29/40;H01L29/417;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
Groover & Associates PLLC |
代理人 |
Groover & Associates PLLC ;Groover Robert;Groover Gwendolyn |
主权项 |
1. A semiconductor device, comprising:
a first-conductivity-type semiconductor source region; a second-conductivity-type semiconductor body region; a gate electrode, which is capacitively coupled to invert a horizontal portion of said body region; a semiconductor drift region which includes both first-conductivity-type and second-conductivity-type semiconductor stripes in parallel; a trench, containing immobile electrostatic charge which is capacitively coupled to invert parts of said second-conductivity-type stripes; and a first-conductivity-type semiconductor drain region; wherein said body region is interposed between said source region and said drift region; and wherein said first-conductivity-type and second-conductivity-type semiconductor stripes are each laterally interposed between said body region and said drain region; whereby, in the ON state, majority carriers flow both through said first-conductivity-type and said second-conductivity-type stripes in parallel. |
地址 |
San Jose CA US |