Hybrid plasma-semiconductor transistors, logic devices and arrays

摘要

A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.

主权项

1. A flexible hybrid plasma semiconductor device, comprising:
a thin and flexible semiconductor base layer; an emitter region diffused into said thin and flexible base layer forming a pn-junction; an insulator layer upon one side of said thin and flexible semiconductor base layer and said emitter region; base and emitter electrodes isolated from each other by said insulator layer and electrically contacting said thin and flexible semiconductor base layer and said emitter region through said insulator layer; a thin and flexible collector layer upon an opposite side of said thin and flexible semiconductor base layer; a microcavity formed in said thin and flexible collector layer aligned with said emitter region; collector electrodes arranged to sustain a microplasma within said microcavity with application of voltage to said collector electrodes, wherein a depth of said emitter region and a thickness of said thin and flexible semiconductor base layer are set to define a predetermined thin portion of said base layer as a base region between said emitter region and said microcavity and microplasma generated in said microcavity serves as a collector.