Method of fabricating a gate dielectric layer

摘要

A method of making a semiconductor device, the method includes forming an active region in a substrate. The method further includes forming a first gate structure over the active region, where the forming the first gate structure includes forming a first interfacial layer. An entirety of a top surface of the first interfacial layer is a curved convex surface. Furthermore, the method includes forming a first high-k dielectric over the first interfacial layer. Additionally, the method includes forming a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric.

主权项

1. A method of making a semiconductor device, the method comprising:
forming an active region in a substrate; forming a first gate structure over the active region, wherein forming the first gate structure comprises:
forming a first interfacial layer, wherein forming the first interfacial layer comprises:
depositing the first interfacial layer having a concave top surface; andperforming a plasma treatment on the first interfacial layer to change the concave top surface into a curved convex surface;forming a first high-k dielectric over the first interfacial layer; andforming a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric.