| 发明名称 | Field effect transistor | ||
| 摘要 | A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly. | ||
| 申请公布号 | US9263530(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201314140260 | 申请日期 | 2013.12.24 |
| 申请人 | EPISTAR CORPORATION;HUGA OPTOTECH INC. | 发明人 | Cheng Chih-Ching;Chang Tsung-Cheng |
| 分类号 | H01L29/778;H01L29/207;H01L29/20;H01L29/66;H01L29/36;H01L29/10 | 主分类号 | H01L29/778 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A field effect transistor, comprising: a substrate; a C-doped semiconductor layer disposed on the substrate; a channel layer disposed on the C-doped semiconductor layer; an electron supply layer disposed on the channel layer, wherein a two-dimensional electron gas generates in an interface between the channel layer and the electron supply layer; and a diffusion barrier layer comprising an Al content and disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer and the C-doped semiconductor layer directly, and a thickness of the diffusion barrier layer is between 5 nm and 30 nm, wherein the Al content in the diffusion barrier layer decreases or increases from the middle of the diffusion barrier layer toward the channel layer and the C-doped semiconductor layer, respectively. | ||
| 地址 | Hsinchu TW | ||