Memory cell with integrated III-V device

摘要

A method including forming an oxide layer on a top of a substrate; forming a deep trench capacitor in the substrate; bonding a III-V compound semiconductor to a top surface of the oxide layer; and forming a III-V device in the III-V compound semiconductor.

主权项

1. A method comprising:
forming an oxide layer on a top surface of a substrate; forming a deep trench through the oxide layer and into the substrate; forming a buried plate of a deep trench capacitor by doping sidewalls of the substrate exposed within the deep trench using an ion implantation technique, the oxide layer remains and protects a top surface of the substrate from being doped by the ion implantation; forming a node dielectric along sidewalls and a bottom of the deep trench; forming an inner electrode on top of the node dielectric within the deep trench; forming an opening by recessing the node dielectric and the inner electrode; and forming a dielectric cap by filling the opening with a dielectric material such that a top surface of the dielectric cap is substantially flush with the top surface of the oxide layer, and bonding a III-V compound semiconductor to a top surface of the oxide layer, wherein the dielectric cap is in direct contact with the III-V compound semiconductor.