发明名称 |
Method for fabricating array substrate of display using multiple photoresists |
摘要 |
A fabricating method of an array substrate, an array substrate and a display device are provided. The array substrate includes a substrate; a plate electrode, a gate electrode, a gate line, a gate insulating film, semiconductor silicon islands, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole. The gate electrode and the gate line include the first transparent conductive material and gate metal material stacked sequentially; the slit electrode is directly connected to the drain electrode; a second transparent conductive material is connected to the gate line through the gate line through hole; and connected to the data line through the data line through hole. |
申请公布号 |
US9263480(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201314350892 |
申请日期 |
2013.08.07 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Qin Wei |
分类号 |
H01L29/04;H01L27/12;G02F1/1362;G02F1/1343 |
主分类号 |
H01L29/04 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. An array substrate comprising a substrate; a plate electrode, a gate electrode, a gate line, a gate insulating film, a semiconductor silicon island, a source electrode, a drain electrode, a data line, a slit electrode formed on the substrate, and the substrate is also provided with a gate line through hole and a data line through hole, wherein
the gate electrode and the gate line comprise a first transparent conductive material and a gate metal material stacked sequentially; the slit electrode is directly connected to the drain electrode; a second transparent conductive material is connected to the gate line through the gate line through hole; and connected to the data line through the data line through hole, wherein the gate insulating film is arranged between the gate electrode and the semiconductor silicon island as well as between the plate electrode and the slit electrode. |
地址 |
Beijing CN |