Method for supplying source gas for producing polycrystalline silicon and polycrystalline silicon

摘要

In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles (9) is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace (100) is represented as V (m3), values of u and Q of each of the source gas supply nozzles (9) are set such that a total Σ(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).

主权项

1. A method of supplying a source gas to a reaction furnace for producing polycrystalline silicon with a Siemens method, the method comprising:
using a reaction furnace in which one or more source gas supply nozzles are disposed such that a flow pattern of the source gas in the reaction furnace is an ascending current in a reaction furnace center portion and is a descending current in a reaction furnace outer wall side portion; and setting, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace is represented as V (m3), values of u and Q of each of the source gas supply nozzles such that a total Σ(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).