发明名称 |
Semiconductor device with pass/fail circuit |
摘要 |
A semiconductor device includes a memory block including memory cells coupled to word lines, and an operation circuit suitable for performing a program operation and a verify operation on memory cells coupled to a selected word line, wherein, when performing the program operation, the operation circuit applies a first program allowance voltage to a bit line of a first program fail cell to keep a program fall status, and a second program allowance voltage having a voltage level different from the first program allowance voltage to a bit line of a second program fail cell to change a program pass status to a program fail status. |
申请公布号 |
US9263148(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201414572071 |
申请日期 |
2014.12.16 |
申请人 |
SK Hynix Inc. |
发明人 |
An Chi Wook;Lee Min Kyu |
分类号 |
G11C16/04;G11C16/34;G11C16/12;G11C16/10 |
主分类号 |
G11C16/04 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A semiconductor device, comprising:
a memory block including memory cells coupled to word lines; and an operation circuit suitable for performing a program operation and a verify operation on memory cells coupled to a selected word line, wherein, when performing the program operation, the operation circuit applies a first program allowance voltage to a bit line of a first program fail cell, to keep a program fail status, and a second program allowance voltage having a voltage level different from the first program allowance voltage to a bit line of a second program fail cell, to change a program pass status to a program fall status. |
地址 |
Gyeonggi-do KR |