发明名称 Temperature-compensated current monitoring
摘要 Systems, methods and media for current monitoring are provided herein. An exemplary method may include: receiving a temperature of a power MOSFET, the temperature being sensed by a temperature sensor; determining a resistance of the power MOSFET using the received temperature; receiving a voltage across the power MOSFET, the voltage being measured by a differential amplifier; calculating a current provided to an electrical load by the power MOSFET using the determined resistance of the power MOSFET and the received voltage; comparing the calculated current to a predetermined threshold; and switching the power MOSFET to an off state in response to the calculated current exceeding the predetermined threshold.
申请公布号 US9263877(B1) 申请公布日期 2016.02.16
申请号 US201414586784 申请日期 2014.12.30
申请人 API Technologies Corp. 发明人 Kellogg Ian
分类号 H02H5/04;H02H3/08;H02H3/04;H05K7/20;G01K7/02;G01K7/16;G01K7/22;G01R19/165;H02J7/00 主分类号 H02H5/04
代理机构 Carr & Ferrell LLP 代理人 Carr & Ferrell LLP
主权项 1. A system for monitoring current comprising: an electrical load; a power MOSFET electrically coupled to the electrical load; a differential amplifier electrically coupled to the power MOSFET; a temperature sensor thermally coupled to the power MOSFET; a processor communicatively coupled to the differential amplifier and the temperature sensor; and a memory communicatively coupled to the processor, the memory storing instructions executable by the processor to perform a method comprising: receiving a temperature of the power MOSFET, the temperature being sensed by the temperature sensor, the receiving the temperature of the power MOSFET including: receiving an analog voltage from the temperature sensor, the analog voltage representing the temperature of the power MOSFET, andconverting the analog voltage to a digital number by an analog to digital converter, the digital number representing the temperature of the power MOSFET,determining a resistance of the power MOSFET using the digital number representing the temperature,receiving a voltage across the power MOSFET, the voltage being measured by the differential amplifier,calculating a current provided to the electrical load by the power MOSFET using the determined resistance of the power MOSFET and the received voltage,comparing the calculated current to a predetermined threshold, andswitching the power MOSFET to an off state in response to the calculated current exceeding the predetermined threshold.
地址 Los Angeles CA US