Method of manufacturing semiconductor device

摘要

An improvement is achieved in the performance of a semiconductor device. In a method of manufacturing the semiconductor device, in an n-type semiconductor substrate, a p-type well as a p-type semiconductor region forming a part of a photodiode is formed and a gate electrode of a transfer transistor is formed. Then, after an n-type well as an n-type semiconductor region forming the other part of the photodiode is formed, a microwave is applied to the semiconductor substrate to heat the semiconductor substrate. Thereafter, a drain region of the transfer transistor is formed.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) providing a semiconductor substrate having a first conductivity type; (b) after the step (a), forming, in the semiconductor substrate, a first semiconductor region having a second conductivity type opposite to the first conductivity type and forming a part of a photodiode; (c) forming, over the semiconductor substrate, a gate electrode of a transfer transistor which transfers charges generated by the photodiode; (d) forming a second semiconductor region having the first conductivity type and forming the other part of the photodiode such that the second semiconductor region is included in the first semiconductor region; (e) after the step (d), applying a microwave to the semiconductor substrate to heat the semiconductor substrate; (f) after the step (e), forming, in the semiconductor substrate, a drain region of the transfer transistor; (g) after the step (f), forming an interlayer insulating film over the semiconductor substrate; (o) forming a contact hole extending through the interlayer insulating film to reach the drain region; (p) filling the contact hole with a conductor film to form a plug; (q) after the step (p), forming an interconnect layer over the interlayer insulating film; (r) after the step (q), attaching a supporting substrate to the semiconductor substrate; and (s) after the step (r), grinding a back surface of the semiconductor substrate.