发明名称 Double module for a modular multi-stage converter
摘要 A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices. The connecting branch diodes are oriented in mutually opposite directions.
申请公布号 US9263969(B2) 申请公布日期 2016.02.16
申请号 US201013703425 申请日期 2010.06.11
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 Eckel Hans-Günter;Gambach Herbert
分类号 H02M7/5387;H02M1/32;H02M7/487;H02M7/757;H02M7/483 主分类号 H02M7/5387
代理机构 代理人 Greenberg Laurence;Stemer Werner;Locher Ralph
主权项 1. A submodule for a high-voltage converter, the submodule comprising: a first energy storage device; a first semiconductor series circuit connected in parallel with said first energy storage device, said first semiconductor series circuit having first and second power semiconductor switching units that can be turned on and off; a first connecting terminal connected to a potential point between said first and second power semiconductor switching units; a second energy storage device connected in series with said first energy storage device; a second semiconductor series circuit connected in parallel with said second energy storage device, said second semiconductor series circuit having third and fourth power semiconductor switching units that can be turned on and off; a second connecting terminal connected to a potential point between said third and fourth power semiconductor switching units; a connection switching unit connected between said first semiconductor series circuit and said second semiconductor series circuit; a first connection branch including a first connection branch diode connecting a potential point between said connection switching unit and said second power semiconductor switching unit to a potential point between said first and second energy storage devices; a second connection branch including a second connection branch diode connecting a potential point between said connection switching unit and said third power semiconductor switching unit to a potential point between said first and second energy storage devices; and said first connection branch diode and said second connection branch diode being oriented in opposite directions with respect to one another.
地址 Munich DE