发明名称 |
Method for commutating a current in an electronic power converter phase from a reverse-conducting IGBT in a diode mode to a reverse-conducting IGBT in an IGBT mode |
摘要 |
The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times. |
申请公布号 |
US9263933(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201013380172 |
申请日期 |
2010.05.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
Eckel Hans-Günter |
分类号 |
H02M1/08;H02M1/16;H02M7/5387;H02M1/00;H03K17/66 |
主分类号 |
H02M1/08 |
代理机构 |
Henry M. Feiereisen LLC. |
代理人 |
Henry M. Feiereisen LLC. |
主权项 |
1. A method for commutating from a first reverse-conducting IGBT operated in a diode mode to a second reverse-conducting IGBT operated in an IGBT mode, said first reverse-conducting IGBT and said second reverse-conducting IGBT electrically connected in series and forming a power converter phase, with the series connection being electrically connected in parallel with a direct-current voltage source, the method comprising the steps of:
a) detecting that a control signal of the first reverse-conducting IGBT has switched to an off-state and turning on the first reverse-conducting IGBT after a first predetermined time period has elapsed, b) detecting that a control signal of the second reverse-conducting IGBT has switched to an on-state and turning on the second reverse-conducting IGBT after a second predetermined time period has elapsed, wherein the second time period is substantially greater than the first time period, and c) turning off the first reverse-conducting IGBT when a measurement voltage induced in a saturable transformer by a zero crossing of a collector current in the first reverse-conducting IGBT that is caused by an onset of a current flow through the second reverse-conducting IGBT exceeds a predetermined threshold value. |
地址 |
München DE |