Method of producing α crystal structure-based alumina films

摘要

In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

主权项

1. A method of producing α crystal structure-based alumina films, comprising the sequential steps of:
performing a first sputtering step of a first alumina film on a substrate, using an aluminum metal target and in an oxidizing gas-containing atmosphere according to a transition sputtering mode arising under conditions existing between a metal sputtering mode and a poisoning sputtering mode, wherein said first sputtering step continues until a thickness of the first film is at most 5 nm; maintaining the substrate in the oxidizing gas-containing atmosphere, without film formation, for a period of time sufficient that the oxidizing gas-containing atmosphere influences the formation of α crystal structure-based alumina; and performing sputtering of a second alumina film on the first film, using an aluminum metal target and in an oxidizing gas-containing atmosphere according to the transition sputtering mode, wherein said second sputtering step continues until a thickness of the second film is at most 5 nm.