Interconnect structures incorporating air-gap spacers

摘要

A dual damascene article of manufacture comprises a trench containing a conductive metal column where the trench and the conductive metal column extend down into and are contiguous with a via. The trench and the conductive metal column and the via have a common axis. These articles comprise interconnect structures incorporating air-gap spacers containing metal/insulator structures for Very Large Scale Integrated (VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in this regard comprises a sidewall air-gap immediately adjacent the side walls of the trench and the conductive metal column, the sidewall air-gap extending down to the via to a depth below a line fixed by the bottom of the trench, and continues downward in the via for a distance of from about 1 Angstrom below the line to the full depth of the via. In another aspect, the article of manufacture comprises a capped dual damascene structure.

主权项

1. A dual damascene article of manufacture comprising a trench containing a conductive metal column said trench and said conductive metal column extending down into and contiguous with a via, said trench and said conductive metal column and said via having a common axis, wherein said trench further comprises a sidewall air-gap adjacent the side walls of said trench, said via, and said conductive metal column, said sidewall air-gap being on opposite sides of said trench and said via and extends down to said via to a depth below a line fixed by the bottom of said trench, and continues downward fully in said via for a distance of from about 1 Angstrom below said line to the full depth of said via, where said conductive metal column comprises a metallization liner contiguous with and on opposite sides of said conductive metal column, and further comprising a perforated pinched off cap operatively associated with said article, said perforated pinched off cap comprising a first cap layer patterned with a patterning layer that defines a narrower gap or narrower gaps extending from the top surface of said first cap layer to the bottom surface of said first cap layer, with said narrower gap or narrower gaps extending through said bottom surface of said first cap layer being positioned over and projecting into said sidewall air-gap, and where only said narrower gap or narrower gaps are sealed, and a second non-perforated cap layer operatively associated with an extending over said top surface of said first cap layer.