Current detection circuit and semiconductor memory apparatus

摘要

The invention provides a current detection circuit and a semiconductor memory apparatus using the current detection circuit thereof. The current detection circuit is capable of rapidly sensing the current flowing through a tiny bit line structure. A page buffer/sensing circuit of the invention includes: a transistor TP3 pre-charging a node SNS during a pre-charge period and providing a target constant current to the node SNS during a discharge period; a transistor TN3 pre-charging the bit line according to the voltage pre-charged to the node SNS; and a transistor TP2 connected to the node SNS. The transistor TP2 detects whether or not a current larger than the constant current supplied by the transistor TP3 is discharged from the bit line and outputs a detection result to a node SENSE.

主权项

1. A current detection circuit, comprising;
a first supply circuit which can set a current value to be detected and supply a constant current corresponding to the current value to a first node; a second supply circuit which is connected between the first node and a bit line and can supply the current supplied to the first node to the bit line when the bit line is discharged; and a determination circuit which is connected to the first node to determine whether or not a current that is larger than the constant current supplied by the first supply circuit is discharged from the bit line, wherein the second supply circuit comprises: a MOS transistor connected between the first node and the bit line; and a monitor circuit monitoring the voltage of the bit line, wherein the monitor circuit reduces the impedance of the MOS transistor when the voltage of the bit line decreases.