| 摘要 |
<PICT:0929074/III/1> Extremely pure semi-conductor material is produced by deposition from a mixture of gaseous compounds on to a carrier body of the material which is heated by passing an electric current therethrough, and wherein the carrier body is supported on a pure carbon holder and where further carbon holders are purified by treatment with the reaction gas product of the deposition reaction. In the production of silicon, the carrier and reducing gas, e.g. hydrogen is taken from vessel 1 through valves 2 and 3 and flowmeter 4 to chamber 5 where it is mixed with an evaporated silicon compound, e.g. silicochloroform or silicon tetrachloride, and the mixture injected into reaction vessel 10 (quartz) via jet 7. Carbon holders 13 support silicon carrier bodies 9, bridged by silicon 12 to allow electrical contact. The reaction gas product flows out through 16 into vessel 18 containing carbon pieces 19. The vessel is heated to 400 DEG to 700 DEG C. by electrical means 22. The treatment is preferably carried out for at least 100 hours and may be performed intermittently wherein during the intervals, the heating is switched off and the vessel opened to atmospheric oxygen by removing stopper 23. During the 100 hours, the production of silicon is performed a plurality of times using a plurality of carrier bodies. Germanium, indium antimonide and silicon carbide may be produced by a similar method.
|
