| 摘要 |
A vapor growth device according to an embodiment comprises: n (n is an integer of 2 or greater) reaction chambers; a main gas supply path through which a process gas is supplied to the n reaction chambers; a main mass flow controller which is installed on the main gas supply path, and controls a flow rate of the process gas flowing in the main gas supply path; (n-1) sub-gas supply paths which are branched from the main gas supply path and through which the branched process gas is supplied to (n-1) reaction chambers of the n reaction chambers; (n-1) sub-pass flow controllers which are installed on the (n-1) sub-gas supply paths, and controls a flow rate of the process gas flowing in the (n-1) sub-gas supplying paths; and one sub-gas supply path which is branched from the main gas supply path and through which a residue of the process gas which does not flow in the (n-1) sub-gas supply paths is supplied to one reaction chamber other than the (n-1) reaction chambers. |
