| 摘要 |
Disclosed are a light emitting diode and a manufacturing method thereof. The light emitting diode includes: a first conductive semiconductor layer; at least two light emitting units placed on the first conductive semiconductor layer by staying away from each other, including an active layer and a second conductive semiconductor layer, and including at least one contact hole exposing a part of the first conductive semiconductor layer by penetrating the active layer and the second conductive semiconductor layer; an additional contact area placed between the light emitting units, and exposing a part of the first conductive semiconductor layer; a second electrode placed on the light emitting units, and making ohmic contact with the second conductive semiconductor layer; a lower insulating layer covering a side of the first conductive semiconductor layer, the light emitting units, and the second electrode; and a first electrode making ohmic contact with the first conductive semiconductor layer through the additional contact area and the contact hole of each of the light emitting units, and insulated from the second electrode. Therefore, the current dispersing efficiency of the light emitting diode is improved. |
