METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device comprises the following steps of: forming a device isolation film pattern on a substrate to form active patterns having contact formation regions; forming a buried gate structure buried in the active patterns or the device isolation film pattern; forming a first insulation film on the active patterns and the device isolation film pattern; etching a portion of the first insulation film and the active patterns located in a contact region to form a preliminary opening; and eliminating the device isolation film pattern of a sidewall of the preliminary opening to form an opening of which a width of a first direction is expanded; forming an insulation film pattern on a sidewall of the opening to enable the opening to have a shape of a contact hole; and a wiring structure having a narrower width than the width of the first direction of the opening and coming in contact with a first contact region in the opening. The wiring structure can have a micro line width.