发明名称 VOLTAGE GENERATOR AND MEMORY DEVICE INCLUDING THE SAME
摘要 A voltage generator comprises a reference voltage providing unit, a comparison voltage providing unit and a comparison unit. The reference voltage providing unit comprises a reference element and a current source connected in series between a power supply voltage and a ground voltage. The reference voltage providing unit outputs a reference voltage through a reference voltage node, which couples the reference element to the current source. The comparison voltage providing unit comprises a magnetic tunnel junction unit and a transistor switch unit. The magnetic tunnel junction unit is connected between the power supply voltage and a comparison voltage node. The transistor switch unit is connected between the ground voltage and the comparison voltage node. The comparison voltage providing unit outputs a comparison voltage through the comparison voltage node. The comparison unit compares a reference voltage with the comparison voltage to supply a write voltage to the transistor switch unit. According to the present invention, the voltage generator uniformly maintains a magnitude of a current between the magnetic tunnel junction unit and the transistor switch unit regardless of a PVT change.
申请公布号 KR20160015553(A) 申请公布日期 2016.02.15
申请号 KR20140097915 申请日期 2014.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 ANTONYAN ARTUR
分类号 G11C5/14;G11C11/15 主分类号 G11C5/14
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