RESISTIVE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

The present invention relates to a resistive memory device including a plurality of memory cells. The resistive memory device comprises a memory cell array and a bad region management unit. The memory cell array includes a plurality of memory layers vertically stacked. Each of the plurality of memory layers includes a plurality of memory cells arranged in spots where a plurality of first lines and a plurality of second lines cross each other. The bad region management unit defines a first memory layer including a bad cell among the plurality of memory cells and at least one second memory layer as a bad region.