| 摘要 |
Provided are a resist stripping composition which comprises an organic amine compound, a glycol ether compound, and one or more types of amide compounds selected from the group consisting of aniline amides, N-ethanolamides, N-t-butylamides, morpholine amides, and N-alkyl piperazine amides; and a resist stripping method using the same. The resist stripping composition can remarkably remove resist patterns which are modified after wet or dry etching by having great polarity of the stripping solution, and has excellent storage stability and, particularly, little process loss due to high boiling point. |
