发明名称 |
NONPLANAR DEVICE AND STRAIN-GENERATING CHANNEL DIELECTRIC |
摘要 |
A nonplanar circuit device having a strain-producing structure disposed under the channel region is provided. In an exemplary embodiment, the integrated circuit device includes a substrate with a first fin structure and a second fin structure disposed on the substrate. An isolation feature trench is defined between the first fin structure and the second fin structure. The circuit device also includes a strain feature disposed on a horizontal surface of the substrate within the isolation feature trench. The strain feature may be configured to produce a strain on a channel region of a transistor formed on the first fin structure. The circuit device also includes a fill dielectric disposed on the strain feature within the isolation feature trench. In some such embodiments, the strain feature is further disposed on a vertical surface of the first fin structure and on a vertical surface of the second fin structure. |
申请公布号 |
KR20160016508(A) |
申请公布日期 |
2016.02.15 |
申请号 |
KR20140192620 |
申请日期 |
2014.12.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHING KUO CHENG;FUNG KA HING;WU ZHIQIANG |
分类号 |
H01L29/78;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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